Numéro de référence
ISO 17109:2015
ISO 17109:2015
Analyse chimique des surfaces — Profilage d'épaisseur — Méthode pour la détermination de la vitesse de pulvérisation lors du profilage d'épaisseur par pulvérisation en spectroscopie de photoélectrons par rayons X, spectroscopie d'électrons Auger et spectrométrie de masse des ions secondaires à l'aide de films minces multicouches
Edition 1
2015-08
Annulée
ISO 17109:2015
61443
Annulée (Edition 1, 2015)

Résumé

ISO 17109:2015 specifies a method for the calibration of the sputtered depth of a material from a measurement of its sputtering rate under set sputtering conditions using a single- or multi-layer reference sample with layers of the same material as that requiring depth calibration. The method has a typical accuracy in the range 5 % to 10 % for layers 20 nm to 200 nm thick when sputter depth profiled using AES, XPS, and SIMS. The sputtering rate is determined from the layer thickness and the sputtering time between relevant interfaces in the reference sample and this is used with the sputtering time to give the thickness of the sample to be measured. The determined ion sputtering rate can be used for the prediction of ion sputtering rates for a wide range of other materials so that depth scales and sputtering times in those materials can be estimated through tabulated values of sputtering yields and atomic densities.

Informations générales

  •  : Annulée
     : 2015-08
    : Annulation de la Norme internationale [95.99]
  •  : 1
  • ISO/TC 201/SC 4
    71.040.40 
  • RSS mises à jour

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