International Standard
ISO 17560:2014
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Reference number
ISO 17560:2014
Edition 2
2014-09
© ISO 2024
International Standard
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Published (Edition 2, 2014)
This standard was last reviewed and confirmed in 2020. Therefore this version remains current.

ISO 17560:2014

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CHF 63
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Abstract

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

General information

  • Status
     : Published
    Publication date
     : 2014-09
    Stage
    : International Standard confirmed [90.93]
  • Edition
     : 2
    Number of pages
     : 10
  • Technical Committee :
    ISO/TC 201/SC 6
    ICS :
    71.040.40 
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Life cycle

Sustainable Development Goals

This standard contributes to the following Sustainable Development Goals

7
Affordable and Clean Energy
9
Industry, Innovation and Infrastructure

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