ISO/DIS 5618-2

Abstract

This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films. It is applicable to the defects specified in AWI 5618-1 from among the defects cropped out on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate. It is applicable to defects with an etch pit density of 7 × 10⁷ cm^-2 or lower.